Josephson junctions for improved qubits

ABSTRACT

A technique relates to a superconducting qubit. A Josephson junction includes a first superconductor and a second superconductor formed on a non-superconducting metal. A capacitor is coupled in parallel with the Josephson junction.

DOMESTIC PRIORITY

This application is a divisional of U.S. application Ser. No.15/813,441, titled “JOSEPHSON JUNCTIONS FOR IMPROVED QUBITS”, filed Nov.15, 2017, which is a continuation of U.S. application Ser. No.15/669,139, titled “JOSEPHSON JUNCTIONS FOR IMPROVED QUBITS”, filed Aug.4, 2017, the contents of which are incorporated by reference herein inits entirety.

STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT

This invention was made with Government support under Contract No.:H98230-13-D-0173 awarded by the National Security Agency. The Governmenthas certain rights to this invention.

BACKGROUND

The present invention generally relates to superconducting devices. Morespecifically, the present invention relates to Josephson junctions forimproved qubits.

Several physical objects have been suggested as potentialimplementations of qubits. However, solid-state circuits, andsuperconducting circuits in particular, are of great interest as theyoffer scalability, which allows circuits to be formed with a largernumber of interacting qubits. Superconducting qubits are typically basedon Josephson junctions. A Josephson junction is two superconductorscoupled by, for example, a thin insulating barrier. A Josephson junctioncan be fabricated by means of an insulating tunnel barrier, such asAl₂O₃, between superconducting electrodes. For such Josephson junctions,the maximum allowed supercurrent is the critical current I_(c).Superconducting tunnel junctions (also referred to as Josephsonjunctions) used in superconducting quantum chips exhibit a Josephsoninductance, which is equivalent to a conventional inductor within thecircuit except for the ability to provide superconducting current.

SUMMARY

Embodiments of the present invention are directed to a superconductingqubit. A non-limiting example of the superconducting qubit includes aJosephson junction including a first superconductor and a secondsuperconductor formed on a non-superconducting metal, and a capacitor inparallel with the Josephson junction.

Embodiments of the present invention are directed to method offabricating a superconducting qubit. A non-limiting example of themethod includes providing a Josephson junction, the Josephson junctionincluding a first superconductor and a second superconductor formed on anon-superconducting metal, and coupling a capacitor in parallel with theJosephson junction.

Embodiments of the present invention are directed to a superconductingqubit. A non-limiting example of the superconducting qubit includes aJosephson junction including a non-superconducting metal formed betweena first superconductor and a second superconductor, and a capacitor inparallel with the Josephson junction.

Embodiments of the present invention are directed to method offabricating a superconducting qubit. A non-limiting example of operatingthe method includes providing a Josephson junction, the Josephsonjunction including a non-superconducting metal formed between a firstsuperconductor and a second superconductor, and coupling a capacitor inparallel with the Josephson junction.

Embodiments of the present invention are directed to a method of forminga microwave device. A non-limiting example of the method includesproviding a superconducting qubit, the superconducting qubit including aJosephson junction having a first superconductor, a secondsuperconductor, and a non-superconducting metal, and coupling a readoutresonator to the superconducting qubit.

Additional technical features and benefits are realized through thetechniques of the present invention. Embodiments and aspects of theinvention are described in detail herein and are considered a part ofthe claimed subject matter. For a better understanding, refer to thedetailed description and to the drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The specifics of the exclusive rights described herein are particularlypointed out and distinctly claimed in the claims at the conclusion ofthe specification. The foregoing and other features and advantages ofthe embodiments of the invention are apparent from the followingdetailed description taken in conjunction with the accompanying drawingsin which:

FIG. 1 depicts a top view of fabricating the superconducting qubitaccording to embodiments of the present invention;

FIG. 2 depicts a cross-sectional view of FIG. 1 according to embodimentsof the present invention;

FIG. 3 depicts a top view of fabricating a superconducting qubitaccording to embodiments of the present invention;

FIG. 4 depicts a cross-sectional view of FIG. 3 according to embodimentsof the present invention;

FIG. 5 depicts a top view of fabricating a superconducting qubitaccording to embodiments of the present invention;

FIG. 6 depicts a cross-sectional view of FIG. 5 according to embodimentsof the present invention.

FIG. 7 depicts a top view of fabricating a superconducting qubit 100according to embodiments of the present invention;

FIG. 8 depicts a cross-sectional view of FIG. 7 according to embodimentsof the present invention.

FIG. 9 depicts a top view of fabricating the superconducting qubitaccording to embodiments of the present invention;

FIG. 10 depicts a cross-sectional view of FIG. 9 according toembodiments of the present invention;

FIG. 11 depicts a top view of fabricating a superconducting qubitaccording to embodiments of the present invention;

FIG. 12 depicts a cross-sectional view of FIG. 11 according toembodiments of the present invention;

FIG. 13 depicts a top view of fabricating a superconducting qubitaccording to embodiments of the present invention;

FIG. 14 depicts a cross-sectional view of FIG. 13 according toembodiments of the present invention;

FIG. 15 depicts a schematic of a microwave device that can be utilizedin quantum computing according to embodiments of the present invention;

FIG. 16 depicts a flow chart of a method of fabricating asuperconducting qubit according to embodiments of the present invention;

FIG. 17 depicts a flow chart of a method of fabricating asuperconducting qubit according to embodiments of the present invention;and

FIG. 18 depicts a flow chart of forming a microwave device according toembodiments of the present invention.

The diagrams depicted herein are illustrative. There can be manyvariations to the diagram or the operations described therein withoutdeparting from the spirit of the invention. For instance, the actionscan be performed in a differing order or actions can be added, deletedor modified. Also, the term “coupled” and variations thereof describeshaving a communications path between two elements and does not imply adirect connection between the elements with no interveningelements/connections between them. All of these variations areconsidered a part of the specification.

In the accompanying figures and following detailed description of thedisclosed embodiments, the various elements illustrated in the figuresare provided with two or three digit reference numbers. With minorexceptions, the leftmost digit(s) of each reference number correspond tothe figure in which its element is first illustrated.

DETAILED DESCRIPTION

For the sake of brevity, conventional techniques related tosemiconductor device and integrated circuit (IC) fabrication may or maynot be described in detail herein. Moreover, the various tasks andprocess steps described herein can be incorporated into a morecomprehensive procedure or process having additional steps orfunctionality not described in detail herein. In particular, varioussteps in the manufacture of semiconductor devices andsemiconductor-based ICs are well known and so, in the interest ofbrevity, many conventional steps will only be mentioned briefly hereinor will be omitted entirely without providing the well-known processdetails.

Turning now to an overview of technologies that are more specificallyrelevant to aspects of the invention, for gate-based superconductingquantum computing, it is important that the frequency of the qubits(forming the circuits) are well controlled, and have tightdistributions. In the state-of-the art, qubits use oxide tunneljunctions to form a Josephson junction, and the Josephson junctionprovides non-linear inductance in the circuit/device. A shunt capacitoris fabricated and creates non-linear oscillator which serves as a qubit.The frequency of this qubit is given by the expression

$f = \frac{1}{2\pi \sqrt{LC}}$

where L is the non-linear inductance of the Josephson junction and C isshunt capacitance. Each Josephson junction has a superconductingcritical current I_(c), and the Josephson inductance is related to I_(c)by the expression

${L_{J} = \frac{\varphi_{0}}{2\pi \; I_{c}}},$

where □₀ is the flux quantum. Combining these two expressions, the tightfrequency distribution (which refers to the difference in frequency ofnominally identical qubits) is due to variability in the criticalcurrent of the Josephson junction and of the shunt capacitance C. Thefrequency spread in a population of nominally identical qubits is knownto originate as a spread in critical current (I_(c)) of the Josephsonjunctions as opposed to the capacitance which is formed by standardlithographic and patterning methods. In addition, it is desirable toincrease the coherence time of the qubit by reducing all sources ofenergy loss from the qubit either from something internal to the deviceor to external systems. It is believed that inclusion of dielectrics(such as the oxide used for the tunnel barrier itself) can lead toadditional losses and associated reduction of coherence times.

The spreads (i.e., differences) in critical current I_(c) (or similarlythe difference in resistance) of the junctions varies as approximately1/√{square root over (A)}, where A is the area of the junction. Thisdependence has been observed in Josephson junctions, and also inmagnetoresistive random access memory (MRAM) tunnel junctions in whichboth MgO₂ and AlO₂ have been used as barriers. This indicates that thedependence on area A for the value of the critical current I_(c) is auniversal behavior. Although this problem has been studied for decades,virtually no progress has been reported in reducing spreads (i.e.,differences in the critical current I_(c)) for a given sized Josephsonjunction. In the case of quantum computing in which many qubits must bemade, with tight control on spreads, this issue becomes much moreimportant. Although it could be possible that further progress can bemade in controlling oxide junction spreads (i.e., controlling thedifferences in the oxide junctions among Josephson junction devices eachdesigned with a given size Josephson junction), exploration ofalternatives takes on new urgency if a practical quantum computer is tobe made.

Turning now to an overview of the aspects of the invention, one or moreembodiments of the invention address the above-described shortcomings ofthe prior art by, instead of using superconducting insulatorsuperconducting Josephson junctions for the transmon qubits, usingsuperconducting-normal-superconducting Josephson junctions. Initially,it may or may not appear that the junction properties are similar forthe two cases, i.e., with the same phase/voltage relationship for both.However, the origin of fluctuations in critical current I_(c) fornominally identical superconducting insulator superconducting junctionsis believed to originate in subtle differences in the tunnel barrierthickness, accentuated by the steep exponential dependence of tunnelingcurrent I_(c) on barrier thickness. In addition, I_(c) fluctuations canbe attributed to defects within the oxide barrier or at the oxide/metalinterface, often referred to as two-level systems (TLS). In accordancewith embodiments of the present invention, the characteristic lengthscale for decay of the order parameter can be 10-100 times longer forsuperconducting normal metal superconducting junctions than forsuperconducting insulator superconducting junctions. Thus, control ofcritical current I_(c) is proportionally easier to obtain by having asuperconducting qubit formed of a capacitor and superconducting normalmetal superconducting Josephson junction. The normal metal is notsuperconducting metal, which means the normal metal (non-superconductingmetal) does not become superconducting at low temperatures (such as ator below 9 Kelvin (K), 4K, etc.). The normal metal is utilized as thetunneling metal in place of the dielectric material such as an oxidelayer. Nominally identical superconducting qubits having Josephsonjunctions made with superconducting normal metal superconductingjunctions have a smaller spread of critical current I_(c) (which meansthe critical current I_(c) is about the same (i.e., tightlydistributed)) than for nominally identical superconducting qubits havingJosephson junctions made with superconducting insulator superconductingjunctions. By eliminating the oxide tunnel barrier and replacing it witha normal metal, the coherence is improved due to the removal ofTLS-containing dielectric material.

Turning now to a more detailed description of aspects of the presentinvention, FIGS. 1-8 depict fabrication of a superconducting qubit 100according to embodiments of the present invention. FIG. 1 depicts a topview of fabricating the superconducting qubit 100 according toembodiments of the present invention. FIG. 2 depicts a cross-sectionalview of FIG. 1 according to embodiments of the present invention.Fabrication of superconducting qubit 100 uses a contacts first process,in which the contacts (i.e., superconducting electrodes) are depositedbefore the tunnel barrier material which is a non-superconductingmaterial.

A superconducting material 102 is formed on top of a substrate 202.Non-limiting examples of the superconducting material 102 includematerial such as niobium (Nb), aluminum (Al), titanium nitride (TiN),and other suitable superconductors.

Non-limiting examples of suitable materials for the substrate 202include Si (silicon), strained Si, SiC (silicon carbide), Ge(germanium), SiGe (silicon germanium), SiGeC (silicon-germanium-carbon),Si alloys, Ge alloys, III-V materials (e.g., GaAs (gallium arsenide),InAs (indium arsenide), InP (indium phosphide), or aluminum arsenide(AlAs)), II-VI materials (e.g., CdSe (cadmium selenide), CdS (cadmiumsulfide), CdTe (cadmium telluride), ZnO (zinc oxide), ZnSe (zincselenide), ZnS (zinc sulfide), or ZnTe (zinc telluride)), or anycombination thereof. Other non-limiting examples of semiconductormaterials include III-V materials, for example, indium phosphide (InP),gallium arsenide (GaAs), aluminum arsenide (AlAs), or any combinationthereof. The III-V materials can include at least one “III element,”such as aluminum (Al), boron (B), gallium (Ga), indium (In), and atleast one “V element,” such as nitrogen (N), phosphorous (P), arsenic(As), antimony (Sb).

FIG. 3 depicts a top view of fabricating the superconducting qubit 100according to embodiments of the present invention. FIG. 4 depicts across-sectional view of FIG. 3 according to embodiments of the presentinvention. The superconducting material 102 of the superconducting qubit100 is patterned. Although each element associated with thesuperconducting qubit 100 is not shown so as not to obscure the figure,the fabrication process patterns readout resonators, ground plane,capacitors, and/or junction contacts with a single-step lithography andsubsequent etching. As one example, lithography can be performed todeposit and pattern a resist layer (which can be positive photoresist ornegative photoresist) in the desired pattern on top of superconductingmaterial 102. Accordingly, the etching of the superconducting material102 (e.g., TiN or Nb) can be accomplished with Cl₂ or BCl₃ etchantsduring reactive ion etching (RIE). Etch of the TiN can also beaccomplished with a wet-etch such as “Standard Clean 1” (NH₄OH+H₂O₂).

The patterning of the superconducting material 102 results in a space302 between superconducting electrodes 304A and 304B. The space 302 isin preparation for depositing the non-superconducting material (i.e.,normal metal). The distance of the space 302 (i.e., gap) can range fromabout 0.1-10 microns (□m). Additionally, the patterning of thesuperconducting material 102 results in capacitor 310 C1 and capacitor312 C2 which are the shunt capacitor for the superconducting qubit 100.In some embodiments of the present invention, both capacitors 310 C1 and312 C2 can be utilized. In some embodiments of the present invention,only one of the capacitors 310 C1 or 312 C2 can be utilized such thatonly one capacitor is patterned.

FIG. 5 depicts a top view of fabricating the superconducting qubit 100according to embodiments of the present invention. FIG. 6 depicts across-sectional view of FIG. 5 according to embodiments of the presentinvention. As can been seen, a non-superconducting metal 502 isdeposited on top of the superconducting material 102 and the substrate202. The non-superconducting metal 502 is deposited in the space 302 tobecome the tunnel barrier. For example, the surface of thesuperconducting qubit 100 can be cleaned in-situ and then metaldeposition of the non-superconducting metal 502 is performed. Thenon-superconducting metal 502 can be copper (Cu), platinum (Pt), etc.Other examples of other suitable tunneling non-superconducting metal 502can include Au, Ag, Pd, and so on. The choice of which metal pair isused for the superconducting and normal metals will be driven by severalfactors. First, the cleanliness of the materials can be a factor, andparticularly the normal metal is important where the quantity ofinterest is the coherence length which is in part governed by the meanfree path of electrons in the material. In addition, the desiredoperating temperature (as a factor) will set a minimum limit on thesuperconducting transition temperature. Finally, ease of processing andthe coexistence of the two metals can be factors, particularly informing a clean non-scattering interface will be important.

The height H1 or thickness of the non-superconducting metal 502 canrange from about 10-1000 nanometers (nm), with approximately 200 nmpreferred (but not a necessity).

FIG. 7 depicts a top view of fabricating the superconducting qubit 100according to embodiments of the present invention. FIG. 8 depicts across-sectional view of FIG. 7 according to embodiments of the presentinvention.

The non-superconducting metal 502 is patterned to be only in thejunction region, thereby forming a Josephson junction 702. The junctionregion is between the two superconducting electrodes 304A and 304B. TheJosephson junction 702 is formed of the superconducting electrode 304A,the non-superconducting metal 502, and the superconducting electrode304B. A portion of the non-superconducting metal 502 may or may notremain on top of the superconducting electrodes 304A and 304B. Thenon-superconducting metal 502 is removed from other parts of thesubstrate 202 and the superconducting metal 102. In some embodiments ofthe present invention, non-superconducting metal 502 can be patterned toonly remain in the space 302. In some embodiments of the presentinvention, non-superconducting metal 502 can be patterned to completelycover (or cover over 80%, 90%, etc.) of the superconducting electrodes304A and 304B.

In order to pattern the tunnel junction which is the non-superconductingmetal 502, lithography is performed (e.g., a photoresist can bedeposited and patterned) and the tunneling metal is etched selectivelyto superconducting metal 102 and silicon (e.g., the substrate 202) inaccordance with the pattern formed using lithography. Therefore, thedesired part of the non-superconducting metal 502 is removed whileleaving (or not etching) the superconducting metal 102 and silicon(e.g., the substrate 202). For example, Cu (as the non-superconductingmetal 502) can be etched selectively to TiN (as the superconductingmetal 102) using a number of commercial etchants. Example commercialetchants can include a chromium etchant CR-7 by Cyantek Corporation(merged with KMG Electronic Chemicals), an aluminum etchant Etch A fromTransene Company, Inc, or a copper etchant from Transene Company, Inc.

As an arbitrary direction to illustrate electrical flow of thecritical/superconducting current I_(c) at superconducting temperaturesin FIG. 8, critical current I_(c) can flow from the superconductingelectrode 304A, into the non-superconducting metal 502, tunnel throughthe non-superconducting metal 502 in the junction region, and back intothe superconducting electrode 304B. Using the techniques discussedherein, nominally identical superconducting qubits 100 (or nominallyidentical superconducting qubits 900 discussed below) can be formed withthe same or nearly the same value for their respective critical currentsI_(c), thereby having a smaller spread of values for their criticalcurrents I_(c) than critical currents I_(c) for nominally identicalstate-of-the-art qubits with superconductor insulator superconductorJosephson junctions.

FIGS. 9-14 depict fabrication of a superconducting qubit 900 accordingto embodiments of the present invention. FIG. 9 depicts a top view offabricating the superconducting qubit 900 according to embodiments ofthe present invention. FIG. 10 depicts a cross-sectional view of FIG. 9according to embodiments of the present invention. Fabrication of thesuperconducting qubit 900 uses a bilayer process, in which tunnelbarrier material which is a non-superconducting material is depositedbefore/below the contacts (i.e., superconducting electrodes).

The non-superconducting metal 502 is deposited on top of the substrate202. The superconducting material 102 is deposited on top ofnon-superconducting metal 502. As noted above, the non-superconductingmetal 502 can be copper (Cu), platinum (Pt), etc. Other examples ofother suitable tunneling non-superconducting metal 502 can include Au,Ag, Pd, etc. Non-limiting examples of the superconducting material 102include material such as niobium (Nb), aluminum (Al), titanium nitride(TiN), and other suitable superconductors.

FIG. 11 depicts a top view of fabricating the superconducting qubit 100according to embodiments of the present invention. FIG. 12 depicts across-sectional view of FIG. 11 according to embodiments of the presentinvention. Both the superconducting material 102 and thenon-superconducting metal 502 are patterned. Although each elementassociated with the superconducting qubit 100 is not shown so as not toobscure the figure, the fabrication process also patterns readoutresonators, ground plane, capacitors, and/or junction contacts with asingle-step lithography and subsequent etching. For example, lithography(using, e.g., a patterned photoresist) is performed to lay out a patternfor the non-superconducting metal 502 and superconducting metal 102, andthe etching of the superconducting material 102 (e.g., TiN, Nb) and thenon-superconducting metal 102 (Cu) can be accomplished with C12 basedetchants during reactive ion etching (RIE). FIG. 11 shows that theshunting capacitors 310 C1 and 312 C2 are formed. As noted above, bothshunting capacitors might not be needed and only one of the shuntingcapacitors 310 C1 and 312 C2 might be utilized in some embodiments ofthe present invention. At this point, it is noted that the patterningstill leaves a shorted junction, and the junction will be subsequentlypatterned. In some embodiments of the present invention, the junctioncan be formed at this time. It is noted that this is just an examplesequence of patterning for some embodiments of the invention. In otherembodiments of the invention, it might be beneficial to only form thejunction at some later point in time since the Josephson junction willbe protected until final fabrication.

FIG. 13 depicts a top view of fabricating the superconducting qubit 900according to embodiments of the present invention. FIG. 14 depicts across-sectional view of FIG. 13 according to embodiments of the presentinvention.

The superconducting metal 102 is patterned in the junction region toform a gap 1402 and to form superconducting electrodes 304A and 304B,thereby forming a Josephson junction 1302. The junction region isbetween but below the two superconducting electrodes 304A and 304B. TheJosephson junction 1302 is formed of the superconducting electrode 304A,the below non-superconducting metal 502, and the superconductingelectrode 304B.

To pattern the gap 1402 in the contacts (i.e., superconductingelectrodes 304A and 304B), lithography is performed (e.g., using aphotoresist) and reactive ion etching is performed to selectively etchthe superconductor material 102 and not the tunneling metal beneath(i.e., the non-superconducting metal 502). For example, TiN(superconductor material 102) can be etched selectively to Cu(non-superconducting metal 502) using a number of commercial etchantssuch as DuPont™ CuSolve™ EKC™ 575.

The height H2 or thickness of the non-superconducting metal 502 canrange from about 10-1000 nm, preferably (but not a necessity) 200 nm.

As an arbitrary direction to illustrate electrical flow of thecritical/superconducting current I_(c) at superconducting temperaturesin FIG. 14, critical current can flow from the superconducting electrode304A, down to the non-superconducting metal 502 below, tunnel throughthe non-superconducting metal 502 in the junction region, and back upinto the superconducting electrode 304B. As can be recognized there isno tunnel barrier in the gap 1402 as would be placed in thestate-of-the-art. Rather, the critical current travels below the gap1402 in the non-superconducting metal 502 underneath. The portions ofthe non-superconducting metal 502 underneath the edges of thesuperconducting electrodes 304A and 304B closest to the gap 1402 act asthe tunnel barrier along with the non-superconducting metal 502underneath the gap 1402.

In circuit quantum electrodynamics, quantum computing employs nonlinearsuperconducting devices (i.e., qubits) to manipulate and store quantuminformation, and resonators (e.g., as a two-dimensional (2D) planarwaveguide or as a three-dimensional (3D) microwave cavity) to read outand/or facilitate interaction among qubits. As one example, eachsuperconducting qubit include one or more Josephson junctions shunted bycapacitors in parallel with the junctions. The qubits are capacitivelycoupled to 2D or 3D microwave cavities. The electromagnetic energyassociated with the qubit is stored in the Josephson junctions and inthe capacitive and inductive elements forming the qubit. FIG. 15 depictsa schematic of a microwave device 1500 that can be utilized in quantumcomputing according to embodiments of the present invention. Themicrowave device 1500 includes the superconducting qubit 100 or 900. Onemicrowave device 1500 is shown as an example, and it should beunderstood that numerous microwave devices 1500 can be included in aquantum computer as understood by one skilled in the art. The microwavedevice 1500 can be utilized to energize (i.e., drive) and read out thesuperconducting qubit 100, 900. In this example, the superconductingqubit 100, 900 can be energized and read out in reflection. In otherimplementations, the superconducting qubit 100, 900 can be energized andread out in transmission as understood by one skilled in the art.

The microwave device 1500 includes the qubit 100 or 900 capacitivelycoupled to the readout resonator 1505 by coupling capacitors 1520A and1520B. The readout resonator 1505 can be representative of a 2D planarwaveguide or a 3D microwave cavity. The readout resonator 1505 iscapacitively coupled to a port 1550 by resonator coupling capacitor1525. The port 1550 is for the microwave device 1500 to receivemicrowave signals (e.g., the qubit drive signal to energize the qubit100, 900 and resonator readout signal to read out the readout resonator1505 thereby reading out the state of the qubit 100, 900) and formeasuring microwave signals reflected from the readout resonator 1505(i.e., receiving the state of the qubit 100, 900).

FIG. 16 depicts a flow chart 1600 of a method of fabricating asuperconducting qubit 900 according to embodiments of the presentinvention. At block 1602, a Josephson junction 1302 is provided whichincludes a first superconductor 304A and a second superconductor 304Bformed on a non-superconducting metal 502. At block 1604, a shuntingcapacitor (e.g., capacitor C1 310, capacitor C2 312, or both capacitorsC1 and C2) is coupled in parallel with the Josephson junction 1302.

The first superconductor 304A and the second superconductor 304B areseparated from one another. The first superconductor and the secondsuperconductor have a space (e.g., gap 1402) separating one fromanother. The space (gap 1402) is about 0.1-10 □m. Thenon-superconducting metal is formed on a semiconductor. Thenon-superconducting metal is copper. The non-superconducting metal isplatinum.

FIG. 17 depicts a flow chart 1700 of a method of fabricating asuperconducting qubit 100 according to embodiments of the presentinvention. At block 1702, a Josephson junction 702 is provided whichincludes a non-superconducting metal 502 formed between a firstsuperconductor 304A and a second superconductor 304B. At block 1704, ashunting capacitor (e.g., capacitor C1 310, capacitor C2 312, or bothcapacitors C1 and C2) is coupled in parallel with the Josephson junction702.

The non-superconducting metal 502 is formed on top a part of both thefirst superconductor 304A and the second superconductor 304B. Thenon-superconducting metal 502, the first superconductor 304A, and thesecond superconductor 304B are each formed on a portion of a substrate202. The first superconductor 304A and the second superconductor 304Bare separated from one another by a gap 302. The distance of the gap 302can range from about 0.1-10 □m. The non-superconducting metal is formedon silicon. The non-superconducting metal is copper. Thenon-superconducting metal is platinum.

FIG. 18 depicts a flow chart 1800 of a method of forming a microwavedevice 1500 according to embodiments of the present invention. At block1802, a superconducting qubit 100 or 900 is provided in which thesuperconducting qubit 100, 900 includes a Josephson junction 702, 1302having a first superconductor 304A, a second superconductor 304B, and anon-superconducting metal 502. At block 1804, a readout resonator 1505is coupled to the superconducting qubit 100, 900.

The circuit elements of the circuits 100, 702, 1500 can be made ofsuperconducting material. The respective resonators andtransmission/feed/pump lines are made of superconducting materials.Examples of superconducting materials (at low temperatures typicallyranging from 0.1 to 20 kelvin (K)) include niobium, aluminum, tantalum,etc. For example, the proximity effect junctions are made ofsuperconducting material, and the tunneling region is made of anon-superconducting metal. The capacitors can be made of superconductingmaterial separated by vacuum as opposed to (typically lossy) dielectric.The transmission lines (i.e., wires) connecting the various elements aremade of a superconducting material.

Various embodiments of the present invention are described herein withreference to the related drawings. Alternative embodiments can bedevised without departing from the scope of this invention. Althoughvarious connections and positional relationships (e.g., over, below,adjacent, etc.) are set forth between elements in the followingdescription and in the drawings, persons skilled in the art willrecognize that many of the positional relationships described herein areorientation-independent when the described functionality is maintainedeven though the orientation is changed. These connections and/orpositional relationships, unless specified otherwise, can be direct orindirect, and the present invention is not intended to be limiting inthis respect. Accordingly, a coupling of entities can refer to either adirect or an indirect coupling, and a positional relationship betweenentities can be a direct or indirect positional relationship. As anexample of an indirect positional relationship, references in thepresent description to forming layer “A” over layer “B” includesituations in which one or more intermediate layers (e.g., layer “C”) isbetween layer “A” and layer “B” as long as the relevant characteristicsand functionalities of layer “A” and layer “B” are not substantiallychanged by the intermediate layer(s).

The following definitions and abbreviations are to be used for theinterpretation of the claims and the specification. As used herein, theterms “comprises,” “comprising,” “includes,” “including,” “has,”“having,” “contains” or “containing,” or any other variation thereof,are intended to cover a non-exclusive inclusion. For example, acomposition, a mixture, process, method, article, or apparatus thatcomprises a list of elements is not necessarily limited to only thoseelements but can include other elements not expressly listed or inherentto such composition, mixture, process, method, article, or apparatus.

Additionally, the term “exemplary” is used herein to mean “serving as anexample, instance or illustration.” Any embodiment or design describedherein as “exemplary” is not necessarily to be construed as preferred oradvantageous over other embodiments or designs. The terms “at least one”and “one or more” are understood to include any integer number greaterthan or equal to one, i.e. one, two, three, four, etc. The terms “aplurality” are understood to include any integer number greater than orequal to two, i.e. two, three, four, five, etc. The term “connection”can include an indirect “connection” and a direct “connection.”

References in the specification to “one embodiment,” “an embodiment,”“an example embodiment,” etc., indicate that the embodiment describedcan include a particular feature, structure, or characteristic, butevery embodiment may or may not include the particular feature,structure, or characteristic. Moreover, such phrases are not necessarilyreferring to the same embodiment. Further, when a particular feature,structure, or characteristic is described in connection with anembodiment, it is submitted that it is within the knowledge of oneskilled in the art to affect such feature, structure, or characteristicin connection with other embodiments whether or not explicitlydescribed.

For purposes of the description hereinafter, the terms “upper,” “lower,”“right,” “left,” “vertical,” “horizontal,” “top,” “bottom,” andderivatives thereof shall relate to the described structures andmethods, as oriented in the drawing figures. The terms “overlying,”“atop,” “on top,” “positioned on” or “positioned atop” mean that a firstelement, such as a first structure, is present on a second element, suchas a second structure, wherein intervening elements such as an interfacestructure can be present between the first element and the secondelement. The term “direct contact” means that a first element, such as afirst structure, and a second element, such as a second structure, areconnected without any intermediary conducting, insulating orsemiconductor layers at the interface of the two elements.

The phrase “selective to,” such as, for example, “a first elementselective to a second element,” means that the first element can beetched and the second element can act as an etch stop.

The terms “about,” “substantially,” “approximately,” and variationsthereof, are intended to include the degree of error associated withmeasurement of the particular quantity based upon the equipmentavailable at the time of filing the application. For example, “about”can include a range of ±8% or 5%, or 2% of a given value.

As previously noted herein, for the sake of brevity, conventionaltechniques related to semiconductor device and integrated circuit (IC)fabrication may or may not be described in detail herein. By way ofbackground, however, a more general description of the semiconductordevice fabrication processes that can be utilized in implementing one ormore embodiments of the present invention will now be provided. Althoughspecific fabrication operations used in implementing one or moreembodiments of the present invention can be individually known, thedescribed combination of operations and/or resulting structures of thepresent invention are unique. Thus, the unique combination of theoperations described in connection with the fabrication of asemiconductor device according to the present invention utilize avariety of individually known physical and chemical processes performedon a semiconductor (e.g., silicon) substrate, some of which aredescribed in the immediately following paragraphs.

In general, the various processes used to form a micro-chip that will bepackaged into an IC fall into four general categories, namely, filmdeposition, removal/etching, semiconductor doping andpatterning/lithography. Deposition is any process that grows, coats, orotherwise transfers a material onto the wafer. Available technologiesinclude physical vapor deposition (PVD), chemical vapor deposition(CVD), electrochemical deposition (ECD), molecular beam epitaxy (MBE)and more recently, atomic layer deposition (ALD) among others.Removal/etching is any process that removes material from the wafer.Examples include etch processes (either wet or dry), andchemical-mechanical planarization (CMP), and the like. Semiconductordoping is the modification of electrical properties by doping, forexample, transistor sources and drains, generally by diffusion and/or byion implantation. These doping processes are followed by furnaceannealing or by rapid thermal annealing (RTA). Annealing serves toactivate the implanted dopants. Films of both conductors (e.g.,poly-silicon, aluminum, copper, etc.) and insulators (e.g., variousforms of silicon dioxide, silicon nitride, etc.) are used to connect andisolate transistors and their components. Selective doping of variousregions of the semiconductor substrate allows the conductivity of thesubstrate to be changed with the application of voltage. By creatingstructures of these various components, millions of transistors can bebuilt and wired together to form the complex circuitry of a modernmicroelectronic device. Semiconductor lithography is the formation ofthree-dimensional relief images or patterns on the semiconductorsubstrate for subsequent transfer of the pattern to the substrate. Insemiconductor lithography, the patterns are formed by a light sensitivepolymer called a photo-resist. To build the complex structures that makeup a transistor and the many wires that connect the millions oftransistors of a circuit, lithography and etch pattern transfer stepsare repeated multiple times. Each pattern being printed on the wafer isaligned to the previously formed patterns and slowly the conductors,insulators and selectively doped regions are built up to form the finaldevice.

The flowchart and block diagrams in the Figures illustrate possibleimplementations of fabrication and/or operation methods according tovarious embodiments of the present invention. Variousfunctions/operations of the method are represented in the flow diagramby blocks. In some alternative implementations, the functions noted inthe blocks can occur out of the order noted in the Figures. For example,two blocks shown in succession can, in fact, be executed substantiallyconcurrently, or the blocks can sometimes be executed in the reverseorder, depending upon the functionality involved.

The descriptions of the various embodiments of the present inventionhave been presented for purposes of illustration, but are not intendedto be exhaustive or limited to the embodiments disclosed. Manymodifications and variations will be apparent to those of ordinary skillin the art without departing from the scope and spirit of the describedembodiments. The terminology used herein was chosen to best explain theprinciples of the embodiments, the practical application or technicalimprovement over technologies found in the marketplace, or to enableothers of ordinary skill in the art to understand the embodimentsdescribed herein.

What is claimed is:
 1. A method of forming a microwave devicecomprising: providing a superconducting qubit, the superconducting qubitincluding a Josephson junction having a first superconductor, a secondsuperconductor, and a non-superconducting metal; and coupling a readoutresonator to the superconducting qubit.
 2. The method of claim 1,wherein the first superconductor and the second superconductor areseparated from one another.
 3. The method of claim 1, wherein a spaceseparates the first superconductor and the second superconductor.
 4. Themethod of claim 3, wherein a dimension of the space is about 0.1-10microns.
 5. The method of claim 1, wherein the non-superconducting metalis formed on a semiconductor.
 6. The method of claim 1, wherein thenon-superconducting metal comprises copper.
 7. The method of claim 1,wherein the non-superconducting metal comprises platinum.
 8. The methodof claim 1, wherein the readout resonator is a two-dimensional planarwaveguide.
 9. The method of claim 1, wherein the readout resonator is athree-dimensional cavity.
 10. The method of claim 1, further comprisinga port, the port being operable to receive microwave signals.
 11. Themethod of claim 10, wherein the port is capacitively coupled to thereadout resonator.
 12. The method of claim 1, further comprising a port,the port being operable to transmit microwave signals reflected from thereadout resonator.
 13. The method of claim 1, wherein thesuperconducting qubit is capacitively coupled to the readout resonator.14. The method of claim 1, wherein the readout resonator is operable toread out a state of the superconducting qubit.
 15. The method of claim1, wherein the readout resonator is operable to read out a state of thesuperconducting qubit in reflection.
 16. The method of claim 1, whereinthe first superconductor and the non-superconducting metal form a stack.17. The method of claim 1, wherein the second superconductor and thenon-superconducting metal form a stack.
 18. The method of claim 1,wherein the first superconductor is positioned away from the secondsuperconductor.
 19. The method of claim 1, wherein thenon-superconducting metal contacts both the first and secondsuperconductors.
 20. The method of claim 1, wherein a junction region isformed between the first and second superconductors.